issue 4 - january 2009 1 www.zetex.com ? diodes incorporated, 2008 www.diodes.com a product line of diodes incorporated zxtn2038f sot23 80 volt npn silicon planar medium power transistor summary v (br)cev > 80v v (br)ceo > 60v i c(cont) = 1a v ce(sat) < 500mv @ 1a complementary type zxtp2039f description this transistor combines high gain, high current operation and low saturation voltage making it ideal for power mosfet gate driving and low loss power switching. features ? low saturation voltage for reduced power dissipation ? 1 to 2 amp high current capability ? pb-free ? sot23 package applications ? power mosfet gate driving ? low loss power switching ordering information device marking n38 device reel size tape width quantity per reel zxtn2038fta 7? 8mm 3,000 zxtn2038ftc 13? 8mm 10,000
zxtn2038f issue 4 - january 2009 2 www.zetex.com ? diodes incorporated, 2008 www.diodes.com absolute maximum ratings parameter symbol limit unit collector-base voltage v cbo 80 v collector-emitter voltage v cev 80 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 5.0 v peak pulse current i cm 2a continuous collector current (*) notes: (*) for a device surface mounted on a 15mm x 15mm fr4 pcb wi th high coverage of single sided 1oz copper, in still air conditions. i c 1a peak base current i bm 1a power dissipation @ t a =25c (*) p d 350 mw operating and storage temperature t j :t stg 55 to +150 c
zxtn2038f issue 4 - january 2009 3 www.zetex.com ? diodes incorporated, 2008 www.diodes.com electrical characteristics (@t amb = 25c) parameter symbol min. max. unit conditions collector-base breakdown voltage v (br)cbo 80 v i c =100 a collector-emitter breakdown voltage v (br)cev 80 v i c =100 a, 0.3v > v be > -1v collector-emitter breakdown voltage v (br)ceo 60 v i c =10ma (*) notes: (*) measured under pulsed conditions. pulse width=300 s. duty cycle 2% spice parameter data is available upon request for this device emitter-base breakdown voltage v (br)ebo 5v i e =100 a collector-emitter cut-off current i ces 100 na v ce =60v collector-base cut-off current i cbo 100 na v cb =60v emitter-base cut-off current i ebo 100 na v eb =4v static forward current transfer ratio h fe 100 100 80 30 300 i c =1ma, v ce =5v i c =500ma, v ce =5v (*) i c =1a, v ce =5v (*) i c =2a, v ce =5v (*) collector-emitter saturation voltage v ce(sat) 0.2 0.25 0.5 v v v i c =100ma, i b =2ma (*) i c =500ma, i b =50ma (*) i c =1a, i b =100ma (*) base-emitter saturation voltage v be(sat) 1.1 v i c =1a, i b =100ma (*) base-emitter turn-on voltage v be(on) 1.0 v i c =1a, v ce =5v (*) transition frequency f t 150 i c =50ma, v ce =10v f=100mhz output capacitance c obo 10 pf v cb =10v, f=1mhz
zxtn2038f issue 4 - january 2009 4 www.zetex.com ? diodes incorporated, 2008 www.diodes.com typical characteristics v ce(sat) -(v) 10a 1a 10ma 100ma 1ma -55 c +25 c +100 c i c /i b =10 v ce(sat) v i c i c -collector current i c -collector current v be(sat) v i c v be(sat) - (v) 0 0.2 100ma 10ma 0.4 0.6 0.8 1.0 10a 1a h fe v i c i c -collector current 1ma 100ma 10ma 10a 1a h fe - typical gain 100 0 300 200 400 10ma 1ma i c -collector current v be(on) v i c 100ma 1a 10a v be(on) - (v) 0.6 0.8 1.0 1.2 0.4 0.2 0 i c -collector current v ce(sat) v i c v ce(sat) -(v) 1ma 0 0.1 100ma 10ma +25 c 0.2 0.3 0.4 0.5 i c /i b =10 10a 1a +100 c -55 c +25 c +100 c -55 c +25 c -55 c +25 c +100 c i c /i b =10 v ce =5v v ce =5v i c -collector current (a) 10 1 0.1 safe operating area v ce - collector emitter voltage (v) 0.1v 10v 100v 1s dc 100ms 10ms 100us 1ms 1v 0 1ma 0.01 i c /i b =50 0.6 0.1 0.2 0.3 0.4 0.5 0.6
zxtn2038f issue 4 - january 2009 5 www.zetex.com ? diodes incorporated, 2008 www.diodes.com packaging details - sot23 package dimensions note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches dim. millimeters inches dim. millimeters inches min. max. min. max. min. max. min. max. a - 1.12 - 0.044 e1 1.90 nom 0.075 nom a1 0.01 0.10 0.0004 0.004 e 2.10 2.64 0.083 0.104 b 0.30 0.50 0.012 0.020 e1 1.20 1.40 0.047 0.055 c 0.085 0.20 0.003 0.008 l 0.25 0.60 0.0098 0.0236 d 2.80 3.04 0.110 0.120 l1 0.45 0.62 0.018 0.024 e0.95 nom0.037 nom----- e e l e1 d a c e1 l1 a1 b 3 leads
zxtn2038f issue 4 - january 2009 6 www.zetex.com ? diodes incorporated, 2008 www.diodes.com sales offices the americas 3050 e. hillcrest drive westlake village, ca 91362-3154 tel: (+1) 805 446 4800 fax: (+1) 805 446 4850 europe kustermann-park balanstra?e 59, d-81541 mnchen germany tel: (+49) 894 549 490 fax: (+49) 894 549 4949 taiwan 7f, no. 50, min chuan road hsin-tien taipei, taiwan tel: (+886) 289 146 000 fax: (+886) 289 146 639 shanghai rm. 606, no.1158 changning road shanghai, china tel: (+86) 215 241 4882 fax (+86) 215 241 4891 shenzhen anlian plaza, #4018 jintian road futian cbd, shenzhen, china tel: (+86) 755 882 849 88 fax: (+86) 755 882 849 99 korea 6 floor, changhwa b/d, 1005-5 yeongtong-dong, yeongtong-gu, suwon-si, gyeonggi-do, korea 443-813 tel: (+82) 312 731 884 fax: (+82) 312 731 885 definitions product change diodes incorporated reserves the right to alter, without notice, specifications, desi gn, price or conditions of supply of any p roduct or service. customers are 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esd (electrostatic discharge) semiconductor devices are susceptible to damage by esd. suitab le precautions should be taken when handling and transporting dev ices. the possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. the extent of damage can vary from immediate functional or parametric malfunc tion to degradation of function or performance in use over ti me. devices suspected of being affected should be replaced. green compliance diodes inc. is committed to environmental excellence in all as pects of its operations which includes meeting or exceeding regul atory requirements with respect to the use of hazardous substances. nu merous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. all diodes zetex components are co mpliant with the rohs directive, and through this it is supporting its customers in their com pliance with weee and elv directives. product status key: ?preview? future device intended for production at some point. samples may be available ?active? product status recommended for new designs ?last time buy (ltb)? device will be discontinued and last time buy period and delivery is in effect ?not recommended for new designs? device is still in production to support existing designs and production ?obsolete? production ha s been discontinued datasheet status key: ?draft version? this term denotes a very early datasheet ver sion and contains highly provisional information, which may change in any manner without notice. ?provisional version? this term denotes a pre-release datasheet. it provides a clear indication of anticipated performance. however, changes to the test conditions and specif ications may occur, at any time and without notice. ?issue? this term denotes an issued datasheet cont aining finalized specifications. however, changes to specifications may occur, at any time and without notice.
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